氮化鎵 (GaN) 可為便攜式產(chǎn)品提供更小、更輕、更高效的桌面 AC-DC 電源。 氮化鎵（GaN）是一種寬帶隙半導體材料。
| 型號 | 產(chǎn)品圖 | 最大漏極電壓 | 最大漏極電流 | 導通內(nèi)阻 | 封裝 | 柵極總電荷 | 反向恢復電荷 | PDF下載 |
| HG65C1R035G |  |
650V | 35m? | TO-247 | 42nC | 142nC |  |
|
| HG65C1R070F |  |
650V | 32A | 70m? | TO-220 | 14nC | 124nC | |
| HG65C1R070G |  |
650V | 32A | 70m? | TO-247 | 13nC | 140nC | |
| HG65C1R070N |  |
650V | 24A | 70m? | DFN8*8 | 9.5nC | 110nC | |
| HG65C1R120N | |
650V | 17A | 120m? | DFN8*8 | 9.5nC | 110nC | |
| HG65C1R200C |  |
650V | 200m? | TO-220 | 9.5nC | 110nC | |
|
| HG65C1R200L |  |
650V | 12A | 167m? | TO-252 | 9.5nC | 110nC | |
| HG65C1R200N |  |
650V | 12A | 200m? | DFN8*8 | 9.5nC | 110nC | |
| HG70C1R460L |  |
700V | 5A | 460m? | TO-252 | 9.5nC | 110nC | |
| HGN65C1R120F |  |
650V | 22A | 120m? | TO-220 | 9.5nC | 110nC | |
